{"title":"集成双极磁晶体管的数值分析","authors":"G. Dima, B. Govoreanu, T. Mouthaan, M. Profirescu","doi":"10.1109/SMICND.1996.557371","DOIUrl":null,"url":null,"abstract":"The operation of dual-collector vertical bipolar magnetotransistors (VMT) is analysed using the 2D process/device simulator TRENDY. This way insight in the device behaviour can be obtained by means of the internal distribution of all variables that are not accessible to experiments. By variation of device geometry, doping profile and terminal voltages/currents we are able to obtain \"rules\" for the optimisation of integrated magnetic microsensors.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Numerical analysis of integrated bipolar magnetotransistors\",\"authors\":\"G. Dima, B. Govoreanu, T. Mouthaan, M. Profirescu\",\"doi\":\"10.1109/SMICND.1996.557371\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The operation of dual-collector vertical bipolar magnetotransistors (VMT) is analysed using the 2D process/device simulator TRENDY. This way insight in the device behaviour can be obtained by means of the internal distribution of all variables that are not accessible to experiments. By variation of device geometry, doping profile and terminal voltages/currents we are able to obtain \\\"rules\\\" for the optimisation of integrated magnetic microsensors.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557371\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557371","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Numerical analysis of integrated bipolar magnetotransistors
The operation of dual-collector vertical bipolar magnetotransistors (VMT) is analysed using the 2D process/device simulator TRENDY. This way insight in the device behaviour can be obtained by means of the internal distribution of all variables that are not accessible to experiments. By variation of device geometry, doping profile and terminal voltages/currents we are able to obtain "rules" for the optimisation of integrated magnetic microsensors.
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