Electrothermal Effects on Reliability of Vertical Resistive Random Access Memory Array by Parallel Computing

A finite element method (FEM)-based simulator with capability of parallel computing is developed for Multiphysics modeling and simulation of resistive random access memory (RRAM) array. The thermal crosstalk effects of a high density vertically integrated RRAM array are investigated. Simulation results show that severe reliability problem may occur during the reset process for RRAM cells even without applied voltage which can be transferred from low resistance state to high resistance state by mistake and hence lose their stored information.