Gate current by impact ionization feedback in sub-micron MOSFET technologies

Because gate currents, I/sub G/, are a sensitive measure of the high energy tail of the hot carrier distribution, understanding their origins is essential to understanding hot carrier effects in MOSFETs. To this end, the gate current of nMOSFETs designed for 0.1 /spl mu/m operation-tenth micron technology-has been investigated theoretically and experimentally. Monte Carlo transport simulations have identified a new I/sub G/ mechanism in these devices based on impact ionization feedback through the vertical fields of the drain substrate junction.