e波段Doherty功率放大器的设计

2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Pub Date : 2018-08-08 DOI:10.1109/PRIME.2018.8430350

M. Najmussadat, Raju Ahamed, D. Parveg, M. Varonen, K. Halonen

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引用次数: 3

摘要

本文介绍了一种基于130纳米SiGe BiCMOS工艺的e波段Doherty功率放大器的设计。本设计包括主放大器、辅助放大器、兰格耦合器和前置放大器。设计的功率放大器饱和输出功率为14.4 dBm，参考P1dB输出为11.7 dBm。该放大器的峰值功率附加效率(PAE)为19.2%。该PA显示P1dB时PAE为17%，6db输出功率关闭时PAE为11.6%。该Doherty PA在75 GHz时的峰值功率增益为23 dB，在60至80 GHz的带宽范围内为3 dB。设计的Doherty PA功耗为52 mW，芯片面积为900 μm × 800 μm，不含射频垫。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design of an E-band Doherty Power amplifier

This paper demonstrates the design of an E-band Doherty power amplifier (PA) based in an 130nm SiGe BiCMOS process. This design includes main and auxiliary amplifiers, lange coupler and a pre-amplifier. The designed power amplifier exhibits a saturated output power of 14.4 dBm and output referred P1dB of 11.7 dBm. The peak power added efficiency (PAE) of this amplifier is 19.2%. This PA shows PAE of 17% at P1dB and 11.6% at 6-dB output power back off. The peak power gain of this Doherty PA is 23 dB at 75 GHz with a 3-dB bandwidth from 60 to 80 GHz. The designed Doherty PA consumes DC power of 52 mW with a chip area of 900 μm × 800 μm without RF pads.

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2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)

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