25V采样开关电源管理数据转换器在0.35µm CMOS与DNMOS

D. Y. Aksin, Ilter Özkaya
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引用次数: 13

摘要

提出了一种输入信号范围超过电源电压11倍的新型高压自举采样开关。该开关在0.35 μ m双孔CMOS工艺中占据250 μ m × 160 μ m的硅面积,具有漏极扩展NMOS (DNMOS)能力。开关安全输入信号范围仅受DNMOS漏极击穿电压(即50V)的限制。实现的开关可以可靠地跟踪和保持20VPP信号在15VDC在1MS/s 2.2V电源,没有正向偏置任何寄生二极管。利用所提出的高压开关设计的开关电容衰减器可以可靠地处理20VPP的差分输入。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
25V sampling switch for power management data converters in 0.35µm CMOS with DNMOS
A new high-voltage bootstrapped sampling switch with input signal range exceeding 11 times its supply voltage is presented. Proposed switch occupies a silicon area of 250µm by 160µm in 0.35µm twin-well CMOS process with drain extended NMOS (DNMOS) capability. The switch safe input signal range is restricted only by the DNMOS drain terminal breakdown voltage, i.e. 50V . Implemented switch can reliably track and hold 20VPP signal on 15VDC at 1MS/s with 2.2V supply without forward biasing any parasitic diode. A designed switched capacitor attenuator utilizing proposed high voltage switch can process 20VPP differential input reliably.
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