{"title":"25V采样开关电源管理数据转换器在0.35µm CMOS与DNMOS","authors":"D. Y. Aksin, Ilter Özkaya","doi":"10.1109/ESSCIRC.2009.5326015","DOIUrl":null,"url":null,"abstract":"A new high-voltage bootstrapped sampling switch with input signal range exceeding 11 times its supply voltage is presented. Proposed switch occupies a silicon area of 250µm by 160µm in 0.35µm twin-well CMOS process with drain extended NMOS (DNMOS) capability. The switch safe input signal range is restricted only by the DNMOS drain terminal breakdown voltage, i.e. 50V . Implemented switch can reliably track and hold 20VPP signal on 15VDC at 1MS/s with 2.2V supply without forward biasing any parasitic diode. A designed switched capacitor attenuator utilizing proposed high voltage switch can process 20VPP differential input reliably.","PeriodicalId":258889,"journal":{"name":"2009 Proceedings of ESSCIRC","volume":"327 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"25V sampling switch for power management data converters in 0.35µm CMOS with DNMOS\",\"authors\":\"D. Y. Aksin, Ilter Özkaya\",\"doi\":\"10.1109/ESSCIRC.2009.5326015\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new high-voltage bootstrapped sampling switch with input signal range exceeding 11 times its supply voltage is presented. Proposed switch occupies a silicon area of 250µm by 160µm in 0.35µm twin-well CMOS process with drain extended NMOS (DNMOS) capability. The switch safe input signal range is restricted only by the DNMOS drain terminal breakdown voltage, i.e. 50V . Implemented switch can reliably track and hold 20VPP signal on 15VDC at 1MS/s with 2.2V supply without forward biasing any parasitic diode. A designed switched capacitor attenuator utilizing proposed high voltage switch can process 20VPP differential input reliably.\",\"PeriodicalId\":258889,\"journal\":{\"name\":\"2009 Proceedings of ESSCIRC\",\"volume\":\"327 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-11-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Proceedings of ESSCIRC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2009.5326015\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Proceedings of ESSCIRC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2009.5326015","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
25V sampling switch for power management data converters in 0.35µm CMOS with DNMOS
A new high-voltage bootstrapped sampling switch with input signal range exceeding 11 times its supply voltage is presented. Proposed switch occupies a silicon area of 250µm by 160µm in 0.35µm twin-well CMOS process with drain extended NMOS (DNMOS) capability. The switch safe input signal range is restricted only by the DNMOS drain terminal breakdown voltage, i.e. 50V . Implemented switch can reliably track and hold 20VPP signal on 15VDC at 1MS/s with 2.2V supply without forward biasing any parasitic diode. A designed switched capacitor attenuator utilizing proposed high voltage switch can process 20VPP differential input reliably.
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