平面掺杂势垒二极管直流特性的设计考虑

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785960

Wu Jie, Guo Fang-min, Xia Guan-qun

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引用次数: 1

摘要

通过改变p/sup +/和本征区的厚度和掺杂浓度，可以独立地改变结构的势垒高度和不对称性。建立了一个模型来研究上述因素对pdbd直流特性的影响程度。

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Design consideration for planar doped barrier diodes' dc characteristics

By variation of the thickness and doping concentration of the p/sup +/ and intrinsic regions, the barrier height and asymmetry of the structure can be independently varied. A model is developed to investigate the extent to which the above factors may affect the PDBDs' dc characteristics.

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来源期刊

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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