高性能全加法器单元:比较分析

T. Sharma, K. G. Sharma, B. P. Singh
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引用次数: 38

摘要

全加法器是设计和开发各种类型的处理器,如数字信号处理器(DSP)、微处理器等的重要组成部分。加法器是加法、乘法、除法、求幂等复杂算术运算的核心元素。在大多数这类系统中,加法器位于影响系统整体速度的关键路径上。因此,提高1位全加法器单元的性能是一个重要的目标。本研究提出一种具有最少MOS晶体管数目的高能效全加法器电池,以减少严重的阈值损耗问题。它大大提高了速度。结果表明,与性能相当的其他类型加法器相比,阈值损耗问题改善了45%,功率延迟积提高了40%。在Tanner EDA工具上对BSIM3v3 90nm和130nm工艺进行了仿真。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High performance full adder cell: A comparative analysis
Full adder is an essential component for the design and development of all types of processors viz. digital signal processors (DSP), microprocessors etc. Adders are the core element of complex arithmetic operations like addition, multiplication, division, exponentiation etc. In most of these systems adder lies in the critical path that affects the overall speed of the system. So enhancing the performance of the 1-bit full adder cell is a significant goal. The present study proposes an energy efficient full adder cell with least MOS transistor count that reduces the serious problem of threshold loss. It considerably increases the speed. Result shows 45% improvement in threshold loss problem, 40% improvement in power-delay product over the other types of adders with comparable performance. The simulation has been carried out on Tanner EDA tool on BSIM3v3 90nm and 130nm technologies.
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