非对准氧化锌纳米线阵列:制备及场发射特性

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI:10.1109/IVESC.2004.1414157

Gengmin Zhang, Liang Chen, Qifeng Zhang

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引用次数: 0

摘要

为了寻找用于未来场发射显示器(fed)的良好场发射极，我们采用热蒸发法在硅片上制备氧化锌纳米线阵列，并测量其场发射性能。在适当控制制备条件的条件下，ZnO NWs直接生长在Si衬底上，并从整个样品表面获得均匀的场发射。

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Non-aligned arrays of zinc oxide nanowires: fabrication and field emission properties

In the search for a good field emitter to be used in future field emission displays (FEDs), we have fabricated arrays of zinc oxide nanowires (ZnO NWs) on silicon wafers by the method of thermal evaporation and then measured their field emission performance. When the fabrication conditions were properly controlled, randomly oriented ZnO NWs directly grew on the Si substrate and uniform field emission was attained from the whole sample surface.

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IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)

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