使用多个I/sub DDQ/测试指标进行异常值识别

S. Sabade, D. Walker
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引用次数: 10

摘要

随着电路复杂性和可靠性要求的不断提高,筛选异常芯片成为越来越重要的测试挑战。对于I/sub DDQ/ test来说尤其如此,因为它在分布中的分布增加了。本文将电流比的概念扩展到利用晶圆级空间相关性。两个指标-电流比和邻近电流比-结合起来筛选晶圆级的异常值。我们证明,单一指标不能单独筛选所有异常值,然而,它们的组合可以用于有效筛选异常芯片。根据工业试验数据进行了分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Use of multiple I/sub DDQ/ test metrics for outlier identification
With increasing circuit complexity and reliability requirements, screening outlier chips is an increasingly important test challenge. This is especially true for I/sub DDQ/ test due to increased spread in the distribution. In this paper, the concept of current ratio is extended to exploit wafer-level spatial correlation. Two metrics - current ratio and neighbor current ratio - are combined to screen outliers at the wafer level. We demonstrate that a single metric alone cannot screen all outliers, however, their combination can be used for effectively screening outlier chips. Analyses based on industrial test data are presented.
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