光学MEMs中InP-to-Si晶圆异质键合

2000 IEEE/LEOS International Conference on Optical MEMS (Cat. No.00EX399) Pub Date : 2000-08-21 DOI:10.1109/OMEMS.2000.879625

D. Pasquariello, M. Camacho, K. Hjort

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引用次数: 0

摘要

只提供摘要形式。我们评估了InP-to-Si直接晶圆键合的亲疏水表面预处理。采用原子力显微镜(AFM)和x射线光电子能谱(XPS)检测表面粗糙度和表面化学性质。键合后，利用红外透射成像、键合强度和电流-电压(I-V)测量对键合界面进行评估。

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InP-to-Si wafer heterobonding for optical MEMs

Summary form only given. We evaluate hydrophilic and hydrophobic surface pre-treatments in InP-to-Si direct wafer bonding. Surface roughness and surface chemistry was examined using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). After bonding, the bonded interfaces were evaluated using infrared transmission imaging, bond-strength and current-voltage (I-V) measurements.

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2000 IEEE/LEOS International Conference on Optical MEMS (Cat. No.00EX399)

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