{"title":"采用28nm CMOS FDSOI技术,通过体偏置控制实现相位噪声优化的134 ghz和202GHz高能效分布式振荡器","authors":"R. Guillaume, F. Rivet, A. Cathelin, Y. Deval","doi":"10.1109/RFIC.2017.7969041","DOIUrl":null,"url":null,"abstract":"Two compact frequency generation topologies based on distributed oscillator architecture have been for the very first time integrated at 134GHz and 202GHz in a 10ML 28nm FDSOI CMOS technology. The efficient fundamental frequency generation enables output powers of 0.4dBm and 0.3dBm and 5.5% and 5.4% DC-to-RF efficiency respectively. The body tie of the 28nm FDSOI technology allows phase noise fine tuning through body-bias control. The measured optimum phase noises are −99.6dBc/Hz and −100.4dBc/Hz at 1MHz offset, for the two different oscillators. Robust design has been as well demonstrated, opening the way to mmW and sub-mmW SoC integration in deep submicron FDSOI CMOS.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Energy efficient distributed-oscillators at 134 and 202GHz with phase-noise optimization through body-bias control in 28nm CMOS FDSOI technology\",\"authors\":\"R. Guillaume, F. Rivet, A. Cathelin, Y. Deval\",\"doi\":\"10.1109/RFIC.2017.7969041\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two compact frequency generation topologies based on distributed oscillator architecture have been for the very first time integrated at 134GHz and 202GHz in a 10ML 28nm FDSOI CMOS technology. The efficient fundamental frequency generation enables output powers of 0.4dBm and 0.3dBm and 5.5% and 5.4% DC-to-RF efficiency respectively. The body tie of the 28nm FDSOI technology allows phase noise fine tuning through body-bias control. The measured optimum phase noises are −99.6dBc/Hz and −100.4dBc/Hz at 1MHz offset, for the two different oscillators. Robust design has been as well demonstrated, opening the way to mmW and sub-mmW SoC integration in deep submicron FDSOI CMOS.\",\"PeriodicalId\":349922,\"journal\":{\"name\":\"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"92 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2017.7969041\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2017.7969041","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Energy efficient distributed-oscillators at 134 and 202GHz with phase-noise optimization through body-bias control in 28nm CMOS FDSOI technology
Two compact frequency generation topologies based on distributed oscillator architecture have been for the very first time integrated at 134GHz and 202GHz in a 10ML 28nm FDSOI CMOS technology. The efficient fundamental frequency generation enables output powers of 0.4dBm and 0.3dBm and 5.5% and 5.4% DC-to-RF efficiency respectively. The body tie of the 28nm FDSOI technology allows phase noise fine tuning through body-bias control. The measured optimum phase noises are −99.6dBc/Hz and −100.4dBc/Hz at 1MHz offset, for the two different oscillators. Robust design has been as well demonstrated, opening the way to mmW and sub-mmW SoC integration in deep submicron FDSOI CMOS.