采用28nm CMOS FDSOI技术,通过体偏置控制实现相位噪声优化的134 ghz和202GHz高能效分布式振荡器

R. Guillaume, F. Rivet, A. Cathelin, Y. Deval
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引用次数: 11

摘要

基于分布式振荡器架构的两种紧凑型频率生成拓扑首次集成在134GHz和202GHz的10ML 28nm FDSOI CMOS技术中。有效的基频产生使输出功率分别为0.4dBm和0.3dBm, dc - rf效率分别为5.5%和5.4%。28nm FDSOI技术的体带允许通过体偏置控制对相位噪声进行微调。对于两个不同的振荡器,在1MHz偏移时测量到的最佳相位噪声分别为- 99.6dBc/Hz和- 100.4dBc/Hz。稳健的设计也得到了证明,为在深亚微米FDSOI CMOS中集成毫米波和亚毫米波SoC开辟了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Energy efficient distributed-oscillators at 134 and 202GHz with phase-noise optimization through body-bias control in 28nm CMOS FDSOI technology
Two compact frequency generation topologies based on distributed oscillator architecture have been for the very first time integrated at 134GHz and 202GHz in a 10ML 28nm FDSOI CMOS technology. The efficient fundamental frequency generation enables output powers of 0.4dBm and 0.3dBm and 5.5% and 5.4% DC-to-RF efficiency respectively. The body tie of the 28nm FDSOI technology allows phase noise fine tuning through body-bias control. The measured optimum phase noises are −99.6dBc/Hz and −100.4dBc/Hz at 1MHz offset, for the two different oscillators. Robust design has been as well demonstrated, opening the way to mmW and sub-mmW SoC integration in deep submicron FDSOI CMOS.
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