电子束物理气相沉积制备锡、银、铜条纹的电迁移比较研究

Zhi Jin, F. Huo, Xundao Liu, H. Nishikawa
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引用次数: 0

摘要

在本研究中,研究了电子束物理气相沉积(EBPVD)在玻璃基板上沉积的Sn, Ag和Cu薄膜条纹在一定电流密度下的电迁移(EM)行为。结果表明,Cu条带的抗电磁效应性能优于Ag条带,Ag样品的电磁电阻率优于Sn样品。造成这种区别的原因是由于各种金属之间的活化能(Ea)不同。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electromigration Comparison Study of Sn, Ag, and Cu Stripes Fabricated by Electron-Beam Physical Vapor Deposition
In this study, electromigration (EM) behavior of Sn, Ag, and Cu thin film stripes that are deposited on the glass substrate by using electron-beam physical vapor deposition (EBPVD) has been investigated under a range of current densities. It was found that the Cu stripe shows a better property than the Ag stripe in resisting the EM effect and the EM resistivity of the Ag sample is better than the Sn sample. The reason causing this distinction is attributed to the activation energy (Ea) difference between the variety of metals.
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