A. Plettner, K. Haberger, A. Englmaier, H. Hartmann
{"title":"SOI基板上的高速互连","authors":"A. Plettner, K. Haberger, A. Englmaier, H. Hartmann","doi":"10.1109/ICSICT.1995.503342","DOIUrl":null,"url":null,"abstract":"A buried and highly conductive layer beneath the silicon surface is used to improve the shielding of the interconnects and to facilitate the transmission of high speed signals. The technology is based on the Bonded Etch-back Silicon On Insulator (BESOI) technique. No additional mask level is required and design freedom is hardly limited.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High speed interconnects on SOI substrates\",\"authors\":\"A. Plettner, K. Haberger, A. Englmaier, H. Hartmann\",\"doi\":\"10.1109/ICSICT.1995.503342\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A buried and highly conductive layer beneath the silicon surface is used to improve the shielding of the interconnects and to facilitate the transmission of high speed signals. The technology is based on the Bonded Etch-back Silicon On Insulator (BESOI) technique. No additional mask level is required and design freedom is hardly limited.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.503342\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.503342","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A buried and highly conductive layer beneath the silicon surface is used to improve the shielding of the interconnects and to facilitate the transmission of high speed signals. The technology is based on the Bonded Etch-back Silicon On Insulator (BESOI) technique. No additional mask level is required and design freedom is hardly limited.
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