{"title":"生长后退火法制备AlGaN/GaN mis_hemt","authors":"Meihua Liu, Yong Zhang, Guoyong Huang","doi":"10.1109/EDTM55494.2023.10103090","DOIUrl":null,"url":null,"abstract":"We present a systematic investigation on the fabrication of AlGaN/GaN MIS-HEMTs with silicon nitride $(\\text{SiN}_{\\mathrm{x}})$ post-growth annealing process after LPCVD. When the post-growth annealing in O2 at 650 °C, the dynamic ON-resistance $(R_{ON})$ is only 30% increase at 600 V drain bias, while the RON increases by 8 times at 100 V drain bias for the MIS-HEMT without post-growth annealing. Post-growth annealing can improve the reliability of device.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication of AlGaN/GaN MIS-HEMTs with Post-growth Annealing\",\"authors\":\"Meihua Liu, Yong Zhang, Guoyong Huang\",\"doi\":\"10.1109/EDTM55494.2023.10103090\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a systematic investigation on the fabrication of AlGaN/GaN MIS-HEMTs with silicon nitride $(\\\\text{SiN}_{\\\\mathrm{x}})$ post-growth annealing process after LPCVD. When the post-growth annealing in O2 at 650 °C, the dynamic ON-resistance $(R_{ON})$ is only 30% increase at 600 V drain bias, while the RON increases by 8 times at 100 V drain bias for the MIS-HEMT without post-growth annealing. Post-growth annealing can improve the reliability of device.\",\"PeriodicalId\":418413,\"journal\":{\"name\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDTM55494.2023.10103090\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM55494.2023.10103090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
本文对LPCVD后用氮化硅$(\text{SiN}_{\ mathm {x}})$生长后退火工艺制备AlGaN/GaN miss - hemts进行了系统的研究。当生长后退火在650℃O2中进行时，在600 V漏极偏压下的动态导通电阻$(R_{ON})$仅增加了30%，而未进行生长后退火的miss - hemt在100 V漏极偏压下的动态导通电阻$增加了8倍。生长后退火可以提高器件的可靠性。
Fabrication of AlGaN/GaN MIS-HEMTs with Post-growth Annealing
We present a systematic investigation on the fabrication of AlGaN/GaN MIS-HEMTs with silicon nitride $(\text{SiN}_{\mathrm{x}})$ post-growth annealing process after LPCVD. When the post-growth annealing in O2 at 650 °C, the dynamic ON-resistance $(R_{ON})$ is only 30% increase at 600 V drain bias, while the RON increases by 8 times at 100 V drain bias for the MIS-HEMT without post-growth annealing. Post-growth annealing can improve the reliability of device.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
