{"title":"微辐射热计中包含像素级ADC的读出集成电路","authors":"C. Hwang, H.C. Lee","doi":"10.1109/SOCDC.2008.4815754","DOIUrl":null,"url":null,"abstract":"Readout integrated circuits involving a pixel-level analog-to-digital converter (ADC) are studied for 320 times 240 microbolometer focal plane arrays (FPAs). Each 2times2 pixel shares an readout circuit, including an operational amplifier(op-Amp), an integration capacitor and a single slope ADC. This readout circuit is designed to achieve 35 times 35 mum2 pixel size in 0.35 mum 2-poly 3-metal CMOS technology.","PeriodicalId":405078,"journal":{"name":"2008 International SoC Design Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Readout integrated circuits involving pixel-level ADC for microbolometers\",\"authors\":\"C. Hwang, H.C. Lee\",\"doi\":\"10.1109/SOCDC.2008.4815754\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Readout integrated circuits involving a pixel-level analog-to-digital converter (ADC) are studied for 320 times 240 microbolometer focal plane arrays (FPAs). Each 2times2 pixel shares an readout circuit, including an operational amplifier(op-Amp), an integration capacitor and a single slope ADC. This readout circuit is designed to achieve 35 times 35 mum2 pixel size in 0.35 mum 2-poly 3-metal CMOS technology.\",\"PeriodicalId\":405078,\"journal\":{\"name\":\"2008 International SoC Design Conference\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International SoC Design Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOCDC.2008.4815754\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International SoC Design Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCDC.2008.4815754","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Readout integrated circuits involving pixel-level ADC for microbolometers
Readout integrated circuits involving a pixel-level analog-to-digital converter (ADC) are studied for 320 times 240 microbolometer focal plane arrays (FPAs). Each 2times2 pixel shares an readout circuit, including an operational amplifier(op-Amp), an integration capacitor and a single slope ADC. This readout circuit is designed to achieve 35 times 35 mum2 pixel size in 0.35 mum 2-poly 3-metal CMOS technology.