{"title":"基于二硫化钼的具有AlN界面层的三维可堆叠电荷阱存储器，用于减少光学声子散射","authors":"Sanggeun Bae, Jungyeop Oh, Mingu Kang, Sungmin Choi","doi":"10.1109/EDTM55494.2023.10103077","DOIUrl":null,"url":null,"abstract":"2D materials are one of the promising alternatives to Si channel for future electronic devices due to their unique characteristics. Herein, we have demonstrated a MoS<inf>2</inf>-based memory device with Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf>/ AlN (A/H/N) as a gate dielectric. We revealed that HfO<inf>2</inf> leads to facilitating memory operation and AlN gives rise to a great electrical performance. With the help of low process temperature, the proposed device can be a milestone in future 3D stackable electronics.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"MoS2 - based 3D stackable charge-trap memory with AlN interface layer for reducing optical phonon scattering\",\"authors\":\"Sanggeun Bae, Jungyeop Oh, Mingu Kang, Sungmin Choi\",\"doi\":\"10.1109/EDTM55494.2023.10103077\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"2D materials are one of the promising alternatives to Si channel for future electronic devices due to their unique characteristics. Herein, we have demonstrated a MoS<inf>2</inf>-based memory device with Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf>/ AlN (A/H/N) as a gate dielectric. We revealed that HfO<inf>2</inf> leads to facilitating memory operation and AlN gives rise to a great electrical performance. With the help of low process temperature, the proposed device can be a milestone in future 3D stackable electronics.\",\"PeriodicalId\":418413,\"journal\":{\"name\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDTM55494.2023.10103077\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM55494.2023.10103077","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
二维材料由于其独特的特性，是未来电子器件中硅通道的有前途的替代品之一。在此，我们展示了一种基于mos2的存储器件，其栅极电介质为Al2O3/HfO2/ AlN (a /H/N)。我们发现HfO2可以促进记忆操作，而AlN可以提高电学性能。在低工艺温度的帮助下，所提出的器件可以成为未来3D可堆叠电子器件的里程碑。
MoS2 - based 3D stackable charge-trap memory with AlN interface layer for reducing optical phonon scattering
2D materials are one of the promising alternatives to Si channel for future electronic devices due to their unique characteristics. Herein, we have demonstrated a MoS2-based memory device with Al2O3/HfO2/ AlN (A/H/N) as a gate dielectric. We revealed that HfO2 leads to facilitating memory operation and AlN gives rise to a great electrical performance. With the help of low process temperature, the proposed device can be a milestone in future 3D stackable electronics.
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