采用NH/ sub3 /-氮化硅原位快速热N/ sub2 /O氧化法制备超薄高品质叠氮/氧化栅电介质

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) Pub Date : 1900-01-01 DOI:10.1109/VTSA.1999.786004

S.C. Song, H. Luan, C. Lee, A. Mao, S.J. Lee, J. Gelpey, M. Marcus, D. Kwong

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引用次数: 3

摘要

本文报道了采用快速高温NH/sub / 3氮化Si，然后原位N/sub /O氧化(NH/sub / 3/+N/sub /O工艺)制备超薄高质量氮/氧化物栅极电介质。与相同厚度的SiO/ sub2 /相比，这些薄膜具有优异的界面性能，显著降低了泄漏电流(/spl sim/10/sup 2//spl times/)，增强了可靠性，并具有优异的硼扩散势垒性能。

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Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N/sub 2/O oxidation of NH/sub 3/-nitrided Si

In this paper, we report ultra thin high quality nitride/oxide gate dielectrics prepared by rapid thermal NH/sub 3/ nitridation of Si followed by in-situ N/sub 2/O oxidation (NH/sub 3/+N/sub 2/O process). These films show excellent interface properties, significant lower leakage current (/spl sim/10/sup 2//spl times/), enhanced reliability, and superior boron diffusion barrier properties compared with SiO/sub 2/ of identical thickness.

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来源期刊

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)

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