突破功率器件的“硅极限”

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785827

Xingbi Chen

{"title":"突破功率器件的“硅极限”","authors":"Xingbi Chen","doi":"10.1109/ICSICT.1998.785827","DOIUrl":null,"url":null,"abstract":"The results of some new developments in voltage sustaining structures for both vertical and lateral power devices are presented. A figure of merit is defined for characterising the devices, show that they are far superior to those of prior art.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Breakthrough to the \\\"Silicon limit\\\" of power devices\",\"authors\":\"Xingbi Chen\",\"doi\":\"10.1109/ICSICT.1998.785827\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The results of some new developments in voltage sustaining structures for both vertical and lateral power devices are presented. A figure of merit is defined for characterising the devices, show that they are far superior to those of prior art.\",\"PeriodicalId\":286980,\"journal\":{\"name\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1998.785827\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.785827","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

本文介绍了立式和横向电力装置电压维持结构的一些新进展。为表征所述设备而定义的优点值，表明它们远远优于现有技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Breakthrough to the "Silicon limit" of power devices

The results of some new developments in voltage sustaining structures for both vertical and lateral power devices are presented. A figure of merit is defined for characterising the devices, show that they are far superior to those of prior art.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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