含光环植入的CMOS晶体管阈值电压波动的温度依赖性

2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI:10.1109/ESSDERC.2014.6948848

H. Edwards, Niu Jin, F. Hou, L. J. Choi, T. Krakowski, K. Joardar

{"title":"含光环植入的CMOS晶体管阈值电压波动的温度依赖性","authors":"H. Edwards, Niu Jin, F. Hou, L. J. Choi, T. Krakowski, K. Joardar","doi":"10.1109/ESSDERC.2014.6948848","DOIUrl":null,"url":null,"abstract":"We report a device physics theory and compact model that predicts the threshold voltage mismatch for CMOS transistors using the halo implant. This model is able to fit CMOS VT mismatch across temperature and device geometry, validating the underlying physical argument. A bias method is presented and shown to recover part of the matching degradation due to the halo implant.","PeriodicalId":262652,"journal":{"name":"2014 44th European Solid State Device Research Conference (ESSDERC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Temperature dependence of threshold voltage fluctuations in CMOS transistors incorporating halo implant\",\"authors\":\"H. Edwards, Niu Jin, F. Hou, L. J. Choi, T. Krakowski, K. Joardar\",\"doi\":\"10.1109/ESSDERC.2014.6948848\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report a device physics theory and compact model that predicts the threshold voltage mismatch for CMOS transistors using the halo implant. This model is able to fit CMOS VT mismatch across temperature and device geometry, validating the underlying physical argument. A bias method is presented and shown to recover part of the matching degradation due to the halo implant.\",\"PeriodicalId\":262652,\"journal\":{\"name\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 44th European Solid State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2014.6948848\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 44th European Solid State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2014.6948848","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们报告了一个器件物理理论和紧凑模型，预测了使用光环植入的CMOS晶体管的阈值电压失配。该模型能够适应不同温度和器件几何形状的CMOS VT不匹配，验证潜在的物理参数。提出并证明了一种偏置方法可以恢复由于晕植入引起的部分匹配退化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Temperature dependence of threshold voltage fluctuations in CMOS transistors incorporating halo implant

We report a device physics theory and compact model that predicts the threshold voltage mismatch for CMOS transistors using the halo implant. This model is able to fit CMOS VT mismatch across temperature and device geometry, validating the underlying physical argument. A bias method is presented and shown to recover part of the matching degradation due to the halo implant.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 44th European Solid State Device Research Conference (ESSDERC)

自引率

0.00%

发文量