一种512 × 512单元PtSi肖特基屏障红外图像传感器

1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1987-12-01 DOI:10.1109/ISSCC.1987.1157233

M. Kimata, M. Denda, N. Yutani, S. Iwade, N. Tsubouchi

{"title":"一种512 × 512单元PtSi肖特基屏障红外图像传感器","authors":"M. Kimata, M. Denda, N. Yutani, S. Iwade, N. Tsubouchi","doi":"10.1109/ISSCC.1987.1157233","DOIUrl":null,"url":null,"abstract":"An image sensor for thermal imaging in the3-5μm infrared band will be discussed. Device has a pixel size of26×20μm and a fill factor of 39% achieved by use of charge sweep vertical readout registers.","PeriodicalId":102932,"journal":{"name":"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"A 512 × 512 element PtSi Schottky-barrier infrared image sensor\",\"authors\":\"M. Kimata, M. Denda, N. Yutani, S. Iwade, N. Tsubouchi\",\"doi\":\"10.1109/ISSCC.1987.1157233\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An image sensor for thermal imaging in the3-5μm infrared band will be discussed. Device has a pixel size of26×20μm and a fill factor of 39% achieved by use of charge sweep vertical readout registers.\",\"PeriodicalId\":102932,\"journal\":{\"name\":\"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1987-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1987.1157233\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1987.1157233","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 25

摘要

讨论了一种用于3-5μm红外波段热成像的图像传感器。设备具有像素大小of26×20μm和39%的填充因子，通过使用电荷扫描垂直读出寄存器实现。

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A 512 × 512 element PtSi Schottky-barrier infrared image sensor

An image sensor for thermal imaging in the3-5μm infrared band will be discussed. Device has a pixel size of26×20μm and a fill factor of 39% achieved by use of charge sweep vertical readout registers.

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来源期刊

1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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