分析混合缓存中SRAM组的最佳比例

A. Valero, J. Sahuquillo, S. Petit, P. López, J. Duato
{"title":"分析混合缓存中SRAM组的最佳比例","authors":"A. Valero, J. Sahuquillo, S. Petit, P. López, J. Duato","doi":"10.1109/ICCD.2012.6378655","DOIUrl":null,"url":null,"abstract":"Cache memories have been typically implemented with Static Random Access Memory (SRAM) technology. This technology presents a fast access time but high energy consumption and low density. As opposite, the recently appeared embedded Dynamic RAM (eDRAM) technology allows caches to be built with lower energy and area, although with a slower access time. The eDRAM technology provides important leakage and area savings, especially in huge Last-Level Caches (LLCs), which occupy almost half the silicon area in some recent microprocessors. This paper proposes a novel hybrid LLC, which combines SRAM and eDRAM banks to address the trade-off among performance, energy, and area. To this end, we explore the optimal percentage of SRAM and eDRAM banks that achieves the best target trade-off. Architectural mechanisms have been devised to keep the most likely accessed blocks in fast SRAM banks as well as to avoid unnecessary destructive reads. Experimental results show that, compared to a conventional SRAM LLC with the same storage capacity, performance degradation does not surpass, on average, 2.9% (even with 12.5% of banks built with SRAM technology), whereas area savings can be as high as 46% for a 1MB-16way LLC. For a 45nm technology node, the energy-delay squared product confirms that a hybrid cache is a better design than the conventional SRAM cache regardless the number of eDRAM banks, and also better than a conventional eDRAM cache when the number of SRAM banks is a quarter or an eighth of the cache banks.","PeriodicalId":313428,"journal":{"name":"2012 IEEE 30th International Conference on Computer Design (ICCD)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Analyzing the optimal ratio of SRAM banks in hybrid caches\",\"authors\":\"A. Valero, J. Sahuquillo, S. Petit, P. López, J. Duato\",\"doi\":\"10.1109/ICCD.2012.6378655\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Cache memories have been typically implemented with Static Random Access Memory (SRAM) technology. This technology presents a fast access time but high energy consumption and low density. As opposite, the recently appeared embedded Dynamic RAM (eDRAM) technology allows caches to be built with lower energy and area, although with a slower access time. The eDRAM technology provides important leakage and area savings, especially in huge Last-Level Caches (LLCs), which occupy almost half the silicon area in some recent microprocessors. This paper proposes a novel hybrid LLC, which combines SRAM and eDRAM banks to address the trade-off among performance, energy, and area. To this end, we explore the optimal percentage of SRAM and eDRAM banks that achieves the best target trade-off. Architectural mechanisms have been devised to keep the most likely accessed blocks in fast SRAM banks as well as to avoid unnecessary destructive reads. Experimental results show that, compared to a conventional SRAM LLC with the same storage capacity, performance degradation does not surpass, on average, 2.9% (even with 12.5% of banks built with SRAM technology), whereas area savings can be as high as 46% for a 1MB-16way LLC. For a 45nm technology node, the energy-delay squared product confirms that a hybrid cache is a better design than the conventional SRAM cache regardless the number of eDRAM banks, and also better than a conventional eDRAM cache when the number of SRAM banks is a quarter or an eighth of the cache banks.\",\"PeriodicalId\":313428,\"journal\":{\"name\":\"2012 IEEE 30th International Conference on Computer Design (ICCD)\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 30th International Conference on Computer Design (ICCD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCD.2012.6378655\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 30th International Conference on Computer Design (ICCD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCD.2012.6378655","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

高速缓存存储器通常采用静态随机存取存储器(SRAM)技术实现。该技术具有存取时间快、能耗高、密度低等特点。相反,最近出现的嵌入式动态RAM (eDRAM)技术允许以更低的能量和面积构建高速缓存,尽管访问时间较慢。eDRAM技术提供了重要的泄漏和面积节省,特别是在巨大的最后一级缓存(llc)中,在一些最新的微处理器中,它占据了几乎一半的硅面积。本文提出了一种新的混合有限责任公司,它结合了SRAM和eDRAM银行,以解决性能,能源和面积之间的权衡。为此,我们探索了实现最佳目标权衡的SRAM和eDRAM组的最佳百分比。体系结构机制被设计为将最有可能访问的块保存在快速SRAM银行中,并避免不必要的破坏性读取。实验结果表明,与具有相同存储容量的传统SRAM LLC相比,性能下降平均不超过2.9%(即使12.5%的银行采用SRAM技术),而1mb -16路LLC的面积节省可高达46%。对于45nm技术节点,能量延迟平方产品证实,混合缓存是比传统SRAM缓存更好的设计,无论eDRAM银行的数量如何。当SRAM组的数量是缓存组的四分之一或八分之一时,也比传统的eDRAM缓存更好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analyzing the optimal ratio of SRAM banks in hybrid caches
Cache memories have been typically implemented with Static Random Access Memory (SRAM) technology. This technology presents a fast access time but high energy consumption and low density. As opposite, the recently appeared embedded Dynamic RAM (eDRAM) technology allows caches to be built with lower energy and area, although with a slower access time. The eDRAM technology provides important leakage and area savings, especially in huge Last-Level Caches (LLCs), which occupy almost half the silicon area in some recent microprocessors. This paper proposes a novel hybrid LLC, which combines SRAM and eDRAM banks to address the trade-off among performance, energy, and area. To this end, we explore the optimal percentage of SRAM and eDRAM banks that achieves the best target trade-off. Architectural mechanisms have been devised to keep the most likely accessed blocks in fast SRAM banks as well as to avoid unnecessary destructive reads. Experimental results show that, compared to a conventional SRAM LLC with the same storage capacity, performance degradation does not surpass, on average, 2.9% (even with 12.5% of banks built with SRAM technology), whereas area savings can be as high as 46% for a 1MB-16way LLC. For a 45nm technology node, the energy-delay squared product confirms that a hybrid cache is a better design than the conventional SRAM cache regardless the number of eDRAM banks, and also better than a conventional eDRAM cache when the number of SRAM banks is a quarter or an eighth of the cache banks.
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