{"title":"具有Vt和Vdd可变性的RTL延迟宏观建模","authors":"Tatsuya Koyagi, S. Majzoub, M. Fukui, R. Saleh","doi":"10.1109/IDT.2011.6123114","DOIUrl":null,"url":null,"abstract":"Recent low-power design utilizes a variety of approaches for Vdd and Vt control to reduce dynamic and leakage power. It is important to be able to explore various low-power design options at a high-level early in the design process. Furthermore, process variation is becoming large and greatly affects the power and delay results. In particular, the delay analysis becomes very complicated and time-consuming with existing tools. This paper proposes a new efficient RTL delay macro-model to address these recent problems. The goal is to provide transistor-level accuracy at the RTL level with Vt and Vdd variability. It also includes the ability to handle PVT variations. The validation of the model is demonstrated by comparison with a circuit simulator and a timing verification tool. The experiments show this macro-model predicts the delay for variable Vdd and Vt with an accuracy of ±5% against HSPICE™ and ±10% against PrimeTime™ for a number of ITC'99 benchmark circuits.","PeriodicalId":167786,"journal":{"name":"2011 IEEE 6th International Design and Test Workshop (IDT)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"RTL delay macro-modeling with Vt and Vdd variability\",\"authors\":\"Tatsuya Koyagi, S. Majzoub, M. Fukui, R. Saleh\",\"doi\":\"10.1109/IDT.2011.6123114\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent low-power design utilizes a variety of approaches for Vdd and Vt control to reduce dynamic and leakage power. It is important to be able to explore various low-power design options at a high-level early in the design process. Furthermore, process variation is becoming large and greatly affects the power and delay results. In particular, the delay analysis becomes very complicated and time-consuming with existing tools. This paper proposes a new efficient RTL delay macro-model to address these recent problems. The goal is to provide transistor-level accuracy at the RTL level with Vt and Vdd variability. It also includes the ability to handle PVT variations. The validation of the model is demonstrated by comparison with a circuit simulator and a timing verification tool. The experiments show this macro-model predicts the delay for variable Vdd and Vt with an accuracy of ±5% against HSPICE™ and ±10% against PrimeTime™ for a number of ITC'99 benchmark circuits.\",\"PeriodicalId\":167786,\"journal\":{\"name\":\"2011 IEEE 6th International Design and Test Workshop (IDT)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE 6th International Design and Test Workshop (IDT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IDT.2011.6123114\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE 6th International Design and Test Workshop (IDT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IDT.2011.6123114","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
RTL delay macro-modeling with Vt and Vdd variability
Recent low-power design utilizes a variety of approaches for Vdd and Vt control to reduce dynamic and leakage power. It is important to be able to explore various low-power design options at a high-level early in the design process. Furthermore, process variation is becoming large and greatly affects the power and delay results. In particular, the delay analysis becomes very complicated and time-consuming with existing tools. This paper proposes a new efficient RTL delay macro-model to address these recent problems. The goal is to provide transistor-level accuracy at the RTL level with Vt and Vdd variability. It also includes the ability to handle PVT variations. The validation of the model is demonstrated by comparison with a circuit simulator and a timing verification tool. The experiments show this macro-model predicts the delay for variable Vdd and Vt with an accuracy of ±5% against HSPICE™ and ±10% against PrimeTime™ for a number of ITC'99 benchmark circuits.