具有Vt和Vdd可变性的RTL延迟宏观建模

Tatsuya Koyagi, S. Majzoub, M. Fukui, R. Saleh
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引用次数: 0

摘要

最近的低功耗设计采用了多种Vdd和Vt控制方法来降低动态和泄漏功率。能够在设计过程的早期高层次上探索各种低功耗设计选项是很重要的。此外,过程变化越来越大,极大地影响了功率和延迟结果。特别是,使用现有工具进行延迟分析变得非常复杂和耗时。本文提出了一种新的有效的RTL延迟宏观模型来解决这些问题。目标是提供具有Vt和Vdd可变性的RTL级晶体管级精度。它还包括处理PVT变化的能力。通过与电路模拟器和时序验证工具的比较,验证了该模型的有效性。实验表明,该宏观模型预测可变Vdd和Vt的延迟,相对于HSPICE™精度为±5%,相对于PrimeTime™精度为±10%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
RTL delay macro-modeling with Vt and Vdd variability
Recent low-power design utilizes a variety of approaches for Vdd and Vt control to reduce dynamic and leakage power. It is important to be able to explore various low-power design options at a high-level early in the design process. Furthermore, process variation is becoming large and greatly affects the power and delay results. In particular, the delay analysis becomes very complicated and time-consuming with existing tools. This paper proposes a new efficient RTL delay macro-model to address these recent problems. The goal is to provide transistor-level accuracy at the RTL level with Vt and Vdd variability. It also includes the ability to handle PVT variations. The validation of the model is demonstrated by comparison with a circuit simulator and a timing verification tool. The experiments show this macro-model predicts the delay for variable Vdd and Vt with an accuracy of ±5% against HSPICE™ and ±10% against PrimeTime™ for a number of ITC'99 benchmark circuits.
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