离子注入诱导温度相关非晶化的紧凑过程模型

2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI:10.1109/SISPAD.2010.5604529

Alexander Schmidt, I. Jang, Tai-kyung Kim, Keun-Ho Lee, Young-Kwan Park, Moon-Hyun Yoo, C. Chung

{"title":"离子注入诱导温度相关非晶化的紧凑过程模型","authors":"Alexander Schmidt, I. Jang, Tai-kyung Kim, Keun-Ho Lee, Young-Kwan Park, Moon-Hyun Yoo, C. Chung","doi":"10.1109/SISPAD.2010.5604529","DOIUrl":null,"url":null,"abstract":"A compact process model of the thickness of amorphous layer generated by high dose ion implantation was developed. The model takes into account implantation temperature that has strong effect on the damage accumulation and amorphization dynamics. The model is based on the results of Kinetic Monte Carlo simulation of implantation process and provides means for fast and precise calculation of amorphous layer thickness created by most common species used in semiconductor technology, with a wide range of implantation energies, doses and temperatures.","PeriodicalId":331098,"journal":{"name":"2010 International Conference on Simulation of Semiconductor Processes and Devices","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Compact process model of temperature dependent amorphization induced by ion implantation\",\"authors\":\"Alexander Schmidt, I. Jang, Tai-kyung Kim, Keun-Ho Lee, Young-Kwan Park, Moon-Hyun Yoo, C. Chung\",\"doi\":\"10.1109/SISPAD.2010.5604529\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A compact process model of the thickness of amorphous layer generated by high dose ion implantation was developed. The model takes into account implantation temperature that has strong effect on the damage accumulation and amorphization dynamics. The model is based on the results of Kinetic Monte Carlo simulation of implantation process and provides means for fast and precise calculation of amorphous layer thickness created by most common species used in semiconductor technology, with a wide range of implantation energies, doses and temperatures.\",\"PeriodicalId\":331098,\"journal\":{\"name\":\"2010 International Conference on Simulation of Semiconductor Processes and Devices\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Conference on Simulation of Semiconductor Processes and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2010.5604529\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Simulation of Semiconductor Processes and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2010.5604529","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

建立了高剂量离子注入产生非晶层厚度的紧凑过程模型。该模型考虑了注入温度对损伤积累和非晶化动力学的影响。该模型基于注入过程的动力学蒙特卡罗模拟结果，为半导体技术中使用的大多数常见物质在广泛的注入能量、剂量和温度范围内产生的非晶层厚度提供了快速和精确的计算手段。

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Compact process model of temperature dependent amorphization induced by ion implantation

A compact process model of the thickness of amorphous layer generated by high dose ion implantation was developed. The model takes into account implantation temperature that has strong effect on the damage accumulation and amorphization dynamics. The model is based on the results of Kinetic Monte Carlo simulation of implantation process and provides means for fast and precise calculation of amorphous layer thickness created by most common species used in semiconductor technology, with a wide range of implantation energies, doses and temperatures.

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来源期刊

2010 International Conference on Simulation of Semiconductor Processes and Devices

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