25nm MOSFET的三维动态RTN模拟:decananometer器件可靠性评估中可变性的重要性

2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI:10.1109/IWCE.2012.6242823

S. Amoroso, F. Adamu-Lema, S. Markov, L. Gerrer, A. Asenov

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引用次数: 6

摘要

在这项工作中，我们提出了一个十安计MOSFET器件可靠性评估的三维动态仿真分析。我们将注意力集中在随机电报噪声(RTN)现象上，表明由物质和电荷的离散性质引起的统计变异性对纳米级器件在瞬态和稳态工作状态下的可靠性性能具有根本影响。

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3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices

In this work we present a 3D dynamic simulation analysis for the reliability evaluation of a decananometer MOSFET device. We have focused our attention on the Random Telegraph Noise (RTN) phenomenon, showing that the statistical variability induced by the discrete nature of matter and charge has a fundamental impact on the reliability performance of nanoscale devices, in both transient and steady-state operating regimes.

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2012 15th International Workshop on Computational Electronics

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