Jialin Cai, Chao Yu, Lingling Sun, Jun Liu, Jiangtao Su
{"title":"基于负载-拉的VHF波段CMOS功率放大器OIP3优化设计方法","authors":"Jialin Cai, Chao Yu, Lingling Sun, Jun Liu, Jiangtao Su","doi":"10.1109/ICMMT.2018.8563609","DOIUrl":null,"url":null,"abstract":"A load-pull based method was used to achieve the best load matching impedance for a VHF band complementary metal oxide semiconductor (CMOS) power amplifier (PA). With the employ of the new technique, PA designers can not only target the load impedance area which provides the maximum output power, but also can maintain the PA with the best output third-order interception point (OIP3). Both schematic and post-layout simulations are provided to validate the effectiveness of the new technique.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Load-Pull-Based OIP3 Optimization Method for VHF Band CMOS Power Amplifier Design\",\"authors\":\"Jialin Cai, Chao Yu, Lingling Sun, Jun Liu, Jiangtao Su\",\"doi\":\"10.1109/ICMMT.2018.8563609\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A load-pull based method was used to achieve the best load matching impedance for a VHF band complementary metal oxide semiconductor (CMOS) power amplifier (PA). With the employ of the new technique, PA designers can not only target the load impedance area which provides the maximum output power, but also can maintain the PA with the best output third-order interception point (OIP3). Both schematic and post-layout simulations are provided to validate the effectiveness of the new technique.\",\"PeriodicalId\":190601,\"journal\":{\"name\":\"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMMT.2018.8563609\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2018.8563609","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Load-Pull-Based OIP3 Optimization Method for VHF Band CMOS Power Amplifier Design
A load-pull based method was used to achieve the best load matching impedance for a VHF band complementary metal oxide semiconductor (CMOS) power amplifier (PA). With the employ of the new technique, PA designers can not only target the load impedance area which provides the maximum output power, but also can maintain the PA with the best output third-order interception point (OIP3). Both schematic and post-layout simulations are provided to validate the effectiveness of the new technique.