基于负载-拉的VHF波段CMOS功率放大器OIP3优化设计方法

Jialin Cai, Chao Yu, Lingling Sun, Jun Liu, Jiangtao Su
{"title":"基于负载-拉的VHF波段CMOS功率放大器OIP3优化设计方法","authors":"Jialin Cai, Chao Yu, Lingling Sun, Jun Liu, Jiangtao Su","doi":"10.1109/ICMMT.2018.8563609","DOIUrl":null,"url":null,"abstract":"A load-pull based method was used to achieve the best load matching impedance for a VHF band complementary metal oxide semiconductor (CMOS) power amplifier (PA). With the employ of the new technique, PA designers can not only target the load impedance area which provides the maximum output power, but also can maintain the PA with the best output third-order interception point (OIP3). Both schematic and post-layout simulations are provided to validate the effectiveness of the new technique.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Load-Pull-Based OIP3 Optimization Method for VHF Band CMOS Power Amplifier Design\",\"authors\":\"Jialin Cai, Chao Yu, Lingling Sun, Jun Liu, Jiangtao Su\",\"doi\":\"10.1109/ICMMT.2018.8563609\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A load-pull based method was used to achieve the best load matching impedance for a VHF band complementary metal oxide semiconductor (CMOS) power amplifier (PA). With the employ of the new technique, PA designers can not only target the load impedance area which provides the maximum output power, but also can maintain the PA with the best output third-order interception point (OIP3). Both schematic and post-layout simulations are provided to validate the effectiveness of the new technique.\",\"PeriodicalId\":190601,\"journal\":{\"name\":\"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMMT.2018.8563609\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2018.8563609","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

针对VHF波段互补金属氧化物半导体(CMOS)功率放大器,提出了一种基于负载-拉的最佳负载匹配阻抗方法。利用该技术,放大器设计人员不仅可以针对提供最大输出功率的负载阻抗区域,而且可以保持最佳输出三阶拦截点(OIP3)。通过原理图和布局后仿真验证了该方法的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Load-Pull-Based OIP3 Optimization Method for VHF Band CMOS Power Amplifier Design
A load-pull based method was used to achieve the best load matching impedance for a VHF band complementary metal oxide semiconductor (CMOS) power amplifier (PA). With the employ of the new technique, PA designers can not only target the load impedance area which provides the maximum output power, but also can maintain the PA with the best output third-order interception point (OIP3). Both schematic and post-layout simulations are provided to validate the effectiveness of the new technique.
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