采用100nm GaN/Si工艺的6W Ka波段功率放大器和1.2dB NF x波段放大器

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI:10.1109/CSICS.2016.7751009

R. Leblanc, Noelia Santos Ibeas, A. Gasmi, F. Auvray, J. Poulain, F. Lecourt, Gulnar Dagher, P. Frijlink

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引用次数: 29

摘要

本文介绍了用毫米波100 nm氮化镓硅(GaN/Si)工艺制备的两个电路的测量结果。第一个电路是27-34 GHz功率放大器，脉冲工作时输出功率为6w，连续工作时输出功率为5.6 W。第二个电路，使用完全相同的过程，是一个8-12 GHz的低噪声放大器，在11到13 GHz之间呈现1.3 dB的噪声系数。

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6W Ka Band Power Amplifier and 1.2dB NF X-Band Amplifier Using a 100nm GaN/Si Process

This paper presents the measured results of two circuits fabricated with a millimeter wave 100 nm Gallium Nitride on Silicon (GaN/Si) process. The first circuit is a 27-34 GHz power amplifier, presenting 6 W of output power in pulsed operation and 5.6 W in CW operation. The second circuit, using exactly the same process, is a 8-12 GHz Low Noise Amplifier presenting 1.3 dB noise figure from 11 to 13 GHz.

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2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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