CdZnTe共面栅格探测器的降噪研究

P. Luke, J.S. Lee, M. Amman, K. Yu
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引用次数: 14

摘要

在CdZnTe探测器上进行的噪声测量表明,探测器相关噪声的主要来源是大泄漏电流产生的散粒噪声和探测器表面产生的1/f噪声。表面泄漏电流的大小似乎对检测器噪声的影响很小或没有影响。对使用金蒸发触点制造的保护环装置的测量表明,触点表现为肖特基屏障,并且在典型工作电压下的体电流可能取决于触点特性,而不是直接取决于材料的体电阻率。这也表明,弹丸噪声的水平受探测器接触的影响,而不一定受材料的体电阻率的影响。采用改进的接触加工工艺,共面栅格探测器的噪声得到了显著的降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Noise reduction in CdZnTe coplanar-grid detectors
Noise measurements on CdZnTe detectors show that the main sources of detector-related noise are shot noise due to bulk leakage current and 1/f noise due to the detector surfaces. The magnitude of surface leakage current appears to have little or no effect on the detector noise. Measurements on guard-ring devices fabricated using gold-evaporated contacts show that the contacts behave as Schottky barriers, and the bulk current at typical operating voltages is likely dependent on the contact properties rather than directly on the material's bulk resistivity. This also suggests that the level of shot noise is affected by the detector contacts and not necessarily by the material's bulk resistivity. A significant reduction in the noise of coplanar-grid detectors has been obtained using a modified contact fabrication process.
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