{"title":"带缓冲层和阳极短结构的4.5 kV MCT","authors":"H. Dettmer, W. Fichtner, F. Bauer","doi":"10.1109/ISPSD.1994.583627","DOIUrl":null,"url":null,"abstract":"MOS controlled thyristors (MCTs) with 4.5 kV static blocking voltage have been fabricated and characterized. A buffer layer with anode shorts has been adapted to the conventional MCT structure to reach the high blocking voltage together with a low on-state voltage. Three different cathode designs with varying emitter area, turn-on channel width and turn-off channel width, have been realized. These IMCTs show MOS controlled turn-on at anode voltages as low as 2.2 V. The on-state voltage is 1.6 V at 100 A cm/sup -2/. The leakage current of these devices is less than 2/spl middot/10/sup -5/ A cm/sup -2/ at room temperature and 4.5 kV blocking voltage. It was demonstrated that these MCTs are able to turn off a current density of 50 A cm/sup -2/ at a line voltage of 3.5 kV in 10 /spl mu/s under inductive load without any snubber, thereby producing a turn-off energy density of approximately 0.7 Jcm/sup -2/.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"4.5 kV MCT with buffer layer and anode short structure\",\"authors\":\"H. Dettmer, W. Fichtner, F. Bauer\",\"doi\":\"10.1109/ISPSD.1994.583627\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MOS controlled thyristors (MCTs) with 4.5 kV static blocking voltage have been fabricated and characterized. A buffer layer with anode shorts has been adapted to the conventional MCT structure to reach the high blocking voltage together with a low on-state voltage. Three different cathode designs with varying emitter area, turn-on channel width and turn-off channel width, have been realized. These IMCTs show MOS controlled turn-on at anode voltages as low as 2.2 V. The on-state voltage is 1.6 V at 100 A cm/sup -2/. The leakage current of these devices is less than 2/spl middot/10/sup -5/ A cm/sup -2/ at room temperature and 4.5 kV blocking voltage. It was demonstrated that these MCTs are able to turn off a current density of 50 A cm/sup -2/ at a line voltage of 3.5 kV in 10 /spl mu/s under inductive load without any snubber, thereby producing a turn-off energy density of approximately 0.7 Jcm/sup -2/.\",\"PeriodicalId\":405897,\"journal\":{\"name\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-05-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1994.583627\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583627","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
4.5 kV MCT with buffer layer and anode short structure
MOS controlled thyristors (MCTs) with 4.5 kV static blocking voltage have been fabricated and characterized. A buffer layer with anode shorts has been adapted to the conventional MCT structure to reach the high blocking voltage together with a low on-state voltage. Three different cathode designs with varying emitter area, turn-on channel width and turn-off channel width, have been realized. These IMCTs show MOS controlled turn-on at anode voltages as low as 2.2 V. The on-state voltage is 1.6 V at 100 A cm/sup -2/. The leakage current of these devices is less than 2/spl middot/10/sup -5/ A cm/sup -2/ at room temperature and 4.5 kV blocking voltage. It was demonstrated that these MCTs are able to turn off a current density of 50 A cm/sup -2/ at a line voltage of 3.5 kV in 10 /spl mu/s under inductive load without any snubber, thereby producing a turn-off energy density of approximately 0.7 Jcm/sup -2/.