多模版光刻与切割工艺及以后的优化

Jian Kuang, Evangeline F. Y. Young
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引用次数: 4

摘要

在生产亚22nm器件的过程中,多重模式光刻技术(MPL)是必不可少的。近年来提出了多模切割(MPC)技术。例如,在带有切割的三重图案(LELECUT)中,前两个掩模用于进行双重图案,而第三个掩模用于切断不需要的部分。在本文中,我们将系统地研究候选切割的生成问题,并提出一个流程,以最大限度地降低基于MPC的标准单元设计的制造成本。我们将进一步扩展优化流程,以处理带有电子束切割的多个图案。实验证明了所提算法的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optimization for Multiple Patterning Lithography with cutting process and beyond
Multiple Patterning Lithography (MPL) is indispensable for producing sub-22nm devices. Recently, multiple patterning with cutting (MPC) was proposed. For example, in triple patterning with cutting (LELECUT), the first two masks are used to do double patterning, whereas the third mask is used to cut off the unwanted parts. In this paper, we will systematically study the problem of cut candidate generation, and propose a flow to optimally minimize the manufacturing cost for standard cell based design with MPC. We will further extend the optimization flow to handle multiple patterning with e-beam cuts. Experiments demonstrate the effectiveness of the proposed algorithms.
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