一个12b 180MS/s 0.068mm2管道sar ADC,合并残留DAC用于降噪

Jianyu Zhong, Yan Zhu, Chi-Hang Chan, Sai-Weng Sin, U. Seng-Pan, R. Martins
{"title":"一个12b 180MS/s 0.068mm2管道sar ADC,合并残留DAC用于降噪","authors":"Jianyu Zhong, Yan Zhu, Chi-Hang Chan, Sai-Weng Sin, U. Seng-Pan, R. Martins","doi":"10.1109/ESSCIRC.2016.7598269","DOIUrl":null,"url":null,"abstract":"This paper presents a 12b 180 MS/s partial-interleaving Pipelined-SAR analog-to-digital converter (ADC). The 1st-stage is implemented with a 2b/cycle SAR ADC for high speed, where we propose a merged-residue-DAC technique to improve the noise performance. The capacitor pre-charging in conventional 2b/cycle operation wastes settling time and switching energy, while with this design approach the switching procedure is optimized to avoid the pre-charging for tri-level reference generation. The prototype ADC fabricated in 65nm CMOS achieves a SNDR of 63.8dB @DC input with 6mW power dissipation from a 1.2V supply, leading to a FoM @DC of 26.3 fJ/conv.-step.","PeriodicalId":246471,"journal":{"name":"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A 12b 180MS/s 0.068mm2 pipelined-SAR ADC with merged-residue DAC for noise reduction\",\"authors\":\"Jianyu Zhong, Yan Zhu, Chi-Hang Chan, Sai-Weng Sin, U. Seng-Pan, R. Martins\",\"doi\":\"10.1109/ESSCIRC.2016.7598269\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 12b 180 MS/s partial-interleaving Pipelined-SAR analog-to-digital converter (ADC). The 1st-stage is implemented with a 2b/cycle SAR ADC for high speed, where we propose a merged-residue-DAC technique to improve the noise performance. The capacitor pre-charging in conventional 2b/cycle operation wastes settling time and switching energy, while with this design approach the switching procedure is optimized to avoid the pre-charging for tri-level reference generation. The prototype ADC fabricated in 65nm CMOS achieves a SNDR of 63.8dB @DC input with 6mW power dissipation from a 1.2V supply, leading to a FoM @DC of 26.3 fJ/conv.-step.\",\"PeriodicalId\":246471,\"journal\":{\"name\":\"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2016.7598269\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2016.7598269","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

本文提出了一种12b 180 MS/s部分交错流水式sar模数转换器(ADC)。第一阶段采用高速2b/周期SAR ADC实现,其中我们提出了合并残余dac技术来改善噪声性能。传统的2b/循环操作中,电容预充电浪费了沉淀时间和开关能量,而该设计方法优化了开关过程,避免了三电平参考电源的预充电。该原型ADC采用65nm CMOS工艺,在1.2V电源下,SNDR为63.8dB @DC,功耗为6mW, FoM @DC为26.3 fJ/con .-step。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 12b 180MS/s 0.068mm2 pipelined-SAR ADC with merged-residue DAC for noise reduction
This paper presents a 12b 180 MS/s partial-interleaving Pipelined-SAR analog-to-digital converter (ADC). The 1st-stage is implemented with a 2b/cycle SAR ADC for high speed, where we propose a merged-residue-DAC technique to improve the noise performance. The capacitor pre-charging in conventional 2b/cycle operation wastes settling time and switching energy, while with this design approach the switching procedure is optimized to avoid the pre-charging for tri-level reference generation. The prototype ADC fabricated in 65nm CMOS achieves a SNDR of 63.8dB @DC input with 6mW power dissipation from a 1.2V supply, leading to a FoM @DC of 26.3 fJ/conv.-step.
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