基于130纳米CMOS技术的毫米波肖特基二极管探测器

2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers. Pub Date : 2006-06-15 DOI:10.1109/VLSIC.2006.1705350

E. Seok, C. Cao, S. Sankaran, K. O

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引用次数: 24

摘要

一种182ghz肖特基势垒二极管检波器在130纳米晶圆厂CMOS上被证明是有效的，该检波器通过调制推-推压控制振荡器的偏置电流作为输入。这项工作表明，利用数字CMOS构建一个工作在毫米波范围顶端的探测器是可能的

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A Millimeter-Wave Schottky Diode Detector in 130-nm CMOS Technology

A 182-GHz Schottky barrier diode detector has been demonstrated in 130-nm foundry CMOS using signals generated on-chip by modulating the bias current of a push-push voltage controlled oscillator as input. This work demonstrated that it is possible to build a detector operating near the top end of millimeter-wave range using digital CMOS

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2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.

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