在甚深亚微米(VDSM)技术中的高性能,低功耗倾斜静态逻辑

C. Kim, Jaesik Lee, K. Baek, Eric Martina, S. Kang
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引用次数: 3

摘要

本文介绍了S/sup 2/L,它具有低功耗、高速的特点,使用了正反馈电路和双Vt。拓扑相关的双Vt方法抑制了泄漏电流,同时提高了VDSM技术的性能。与单调静态(MS) CMOS相比,S/sup 2/L消耗更少的动态和静态功率。我们给出了NAND-NOR门链和32b加法器的仿真结果,以证明与其他技术相比,S/sup 2/L的有效性。由于级联的灵活性,所提出的电路架构的设计自动化可以很容易地实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-performance, low-power skewed static logic in very deep-submicron (VDSM) technology
This paper presents S/sup 2/L, which exhibits low-power, high-speed with use of positive feedback circuits and dual Vt. Topology-dependent dual Vt approach suppresses leakage current while boosting the performance in VDSM technology. S/sup 2/L consumes less dynamic and static power compared to Monotonic Static (MS) CMOS. We present simulation results of NAND-NOR gate chains and 32-b adders to demonstrate the effectiveness of the S/sup 2/L compared to other techniques. Design automation for the proposed circuit architecture can be achieved easily due to cascading flexibility.
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