600v沟槽IGBT与平面IGBT的比较——对IGBT性能极限的评价

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583811

M. Harada, T. Minato, H. Takahashi, H. Nishihara, K. Inoue, I. Takata

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引用次数: 44

摘要

我们开发了大面积沟槽MOS工艺，并实验制造了600v, 50a级沟槽IGBT。通过缩小沟槽间距，器件获得了比平面igbt更好的ON状态电压(V/sub CE/(sat)=1.4 V, t/sub f/=230 ns @ 200 a /cm/sup 2/)和更好的锁存性能(dI/sub c//dt/spl ap/2500 a /(s/spl中点/cm/sup 2/))。沟槽型igbt的击穿电压(BV/sub CES/)也高于平面型igbt。我们已经证实，沟槽型IGBT实现了IGBT开发之初提出的“PIN二极管+MOS栅极”的理想结构。沟槽IGBT有望成为一种优越的高压器件，特别是由于其闭锁操作的持久性能。

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600 V trench IGBT in comparison with planar IGBT-an evaluation of the limit of IGBT performance

We have developed a large area trench MOS process and experimentally manufactured a 600 V, 50 A class trench IGBT. By narrowing the trench pitch, the devices achieved a superior ON state voltage(V/sub CE/(sat)=1.4 V, t/sub f/=230 ns @ 200 A/cm/sup 2/) and much better endurance property (dI/sub c//dt/spl ap/2500 A/(s/spl middot/cm/sup 2/)) for latch-up than planar IGBTs. Trench IGBTs also showed a higher breakdown voltage(BV/sub CES/) than planar IGBTs. We have confirmed that the trench IGBT realizes the ideal structure, "PIN diode+MOS gate", which was proposed at the start of the IGBT development. The trench IGBT would be expected to be a superior high voltage device, especially due to its endurance property for latch-up operation.

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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