T. Balen, R. G. Vaz, Gustavo S. Fernandes, E. R. Machado, O. Gonçalez
{"title":"备选偏置模块冗余:一种备选容差技术,以应付TID效应","authors":"T. Balen, R. G. Vaz, Gustavo S. Fernandes, E. R. Machado, O. Gonçalez","doi":"10.1109/IMS3TW.2014.6997402","DOIUrl":null,"url":null,"abstract":"In this work a novel radiation tolerance technique based on modular redundancy, associated to an alternated biasing scheme, is presented. The goal of this technique is to extend electronic systems lifetime in radiation environments for circuits that are susceptible to TID effects. In order to validate this technique, a board level prototype was built, considering an FPAA (Field Programmable Analog Array) as Device Under Test (DUT), to which the concept was applied. The prototype was exposed to Co60 gamma radiation with a dose rate of 1 krad(Si)/h. Results show that devices that are alternated biased are able to tolerate higher accumulated doses than the one that is permanently biased.","PeriodicalId":166586,"journal":{"name":"19th Annual International Mixed-Signals, Sensors, and Systems Test Workshop Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Alternate Biasing Modular Redundancy: An alternative tolerance technique to cope with TID effects\",\"authors\":\"T. Balen, R. G. Vaz, Gustavo S. Fernandes, E. R. Machado, O. Gonçalez\",\"doi\":\"10.1109/IMS3TW.2014.6997402\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work a novel radiation tolerance technique based on modular redundancy, associated to an alternated biasing scheme, is presented. The goal of this technique is to extend electronic systems lifetime in radiation environments for circuits that are susceptible to TID effects. In order to validate this technique, a board level prototype was built, considering an FPAA (Field Programmable Analog Array) as Device Under Test (DUT), to which the concept was applied. The prototype was exposed to Co60 gamma radiation with a dose rate of 1 krad(Si)/h. Results show that devices that are alternated biased are able to tolerate higher accumulated doses than the one that is permanently biased.\",\"PeriodicalId\":166586,\"journal\":{\"name\":\"19th Annual International Mixed-Signals, Sensors, and Systems Test Workshop Proceedings\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"19th Annual International Mixed-Signals, Sensors, and Systems Test Workshop Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMS3TW.2014.6997402\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"19th Annual International Mixed-Signals, Sensors, and Systems Test Workshop Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMS3TW.2014.6997402","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Alternate Biasing Modular Redundancy: An alternative tolerance technique to cope with TID effects
In this work a novel radiation tolerance technique based on modular redundancy, associated to an alternated biasing scheme, is presented. The goal of this technique is to extend electronic systems lifetime in radiation environments for circuits that are susceptible to TID effects. In order to validate this technique, a board level prototype was built, considering an FPAA (Field Programmable Analog Array) as Device Under Test (DUT), to which the concept was applied. The prototype was exposed to Co60 gamma radiation with a dose rate of 1 krad(Si)/h. Results show that devices that are alternated biased are able to tolerate higher accumulated doses than the one that is permanently biased.