磁电装置可行性论证。垂直Cr2O3霍尔棒装置中交换偏置的电压控制

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-06-19 DOI:10.1109/DRC.2016.7548495

Zhengyang Zhao, W. Echtenkamp, M. Street, C. Binek, Jianping Wang

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引用次数: 3

摘要

最近提出了几种使用电压来控制磁性的新兴机制，因为它们可能在节能自旋电子器件中应用[1]。其中，实现这一目标的一种有希望的方法是使用电压来控制磁电(ME)反铁磁体Cr2O3的交换偏置(图1)[2]。在这项工作中，我们使用双层薄膜结构Cr2O3/[Co/Pd]n在器件级展示了ME效应。

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Magnetoelectric device feasibility demonstration — Voltage control of exchange bias in perpendicular Cr2O3 Hall bar device

Several emerging mechanisms using voltage to control the magnetism have recently been proposed because of their possible applications in energy-efficient spintronic devices [1]. Among others, one promising way to reach this goal is to use voltage to control the exchange bias of the magnetoelectric (ME) antiferromagnet Cr2O3 (Fig. 1) [2]. In this work, we demonstrate the ME effect in the device level using a bilayer thin film structure Cr2O3/[Co/Pd]n.

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2016 74th Annual Device Research Conference (DRC)

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