{"title":"用于3D-IC中噪声耦合最小化的垂直螺线管电感","authors":"G. Yahalom, Alice Wang, U. Ko, A. Chandrakasan","doi":"10.1109/RFIC.2015.7337703","DOIUrl":null,"url":null,"abstract":"This paper presents the use of an integrated solenoid inductor in three dimensional integrated circuits (3D-IC) for improved noise mitigation. The structure is fabricated in a two-tier, stacked 28nm CMOS using through silicon vias (TSV). The structure is implemented as part of an LC voltage-controlled oscillator (VCO), and exhibits 6dB improvement in phase noise and 14dB less coupling from adjacent digital clock lines compared to a planar two-turn inductor.","PeriodicalId":121490,"journal":{"name":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A vertical solenoid inductor for noise coupling minimization in 3D-IC\",\"authors\":\"G. Yahalom, Alice Wang, U. Ko, A. Chandrakasan\",\"doi\":\"10.1109/RFIC.2015.7337703\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the use of an integrated solenoid inductor in three dimensional integrated circuits (3D-IC) for improved noise mitigation. The structure is fabricated in a two-tier, stacked 28nm CMOS using through silicon vias (TSV). The structure is implemented as part of an LC voltage-controlled oscillator (VCO), and exhibits 6dB improvement in phase noise and 14dB less coupling from adjacent digital clock lines compared to a planar two-turn inductor.\",\"PeriodicalId\":121490,\"journal\":{\"name\":\"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2015.7337703\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2015.7337703","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A vertical solenoid inductor for noise coupling minimization in 3D-IC
This paper presents the use of an integrated solenoid inductor in three dimensional integrated circuits (3D-IC) for improved noise mitigation. The structure is fabricated in a two-tier, stacked 28nm CMOS using through silicon vias (TSV). The structure is implemented as part of an LC voltage-controlled oscillator (VCO), and exhibits 6dB improvement in phase noise and 14dB less coupling from adjacent digital clock lines compared to a planar two-turn inductor.