超过1000V的半超结MOSFET，超低导通电阻低于si极限

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487942

W. Saito, I. Omura, S. Aida, S. Koduki, M. Izumisawa, H. Yoshioka, T. Ogura

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引用次数: 15

摘要

首次证明了击穿电压超过1000 V的si - mosfet，实现了低于理论硅极限的低导通电阻。所制备的mosfet具有半超结(semi- j)结构，即超结(SJ)结构与n-底辅助层(BAL)结构的结合。SemiSJ mosfet分别实现了1100和1400 V的高击穿电压和54和163 m/spl ω /cm/sup 2/的低导通电阻。高电压SemiSJ-MOSFET的制造工艺完全等同于600 V级SJ-MOSFET的工艺，这意味着600 V级MOSFET形成SJ结构的单一优化工艺可以用于宽电压范围扩展到1200 V的MOSFET。这些结果显示了具有更高应用电压范围的新型硅功率mosfet的可能性。

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Over 1000V semi-superjunction MOSFET with ultra-low on-resistance below the Si-limit

Si-MOSFETs with the breakdown voltage of over 1000 V were demonstrated, for the first time, realizing low on-resistance below the theoretical Si-limit. The fabricated MOSFETs have semi-superjunction (SemiSJ) structure, which is the combination of superjunction (SJ) structure and n-bottom assisted layer (BAL). The SemiSJ MOSFETs realize both the high breakdown voltage of 1100 and 1400 V and the low on-resistance of 54 and 163 m/spl Omega/cm/sup 2/, respectively. The fabrication process for the high voltage SemiSJ-MOSFET was completely equivalent to a 600-V class SJ-MOSFET process, which implies that a single optimized process for forming SJ structure for 600 V-class MOSFET can be used for a wide voltage range extending up to 1200 V MOSFET. These results show the possibility of new Si power-MOSFET with higher application voltage range.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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