用于10gbps开关模式应用和x波段功率放大器的LDMOS晶体管的评估

2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 1900-01-01 DOI:10.1109/SIRF.2016.7445467

C. Wipf, R. Sorge, Jens Schmidt

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引用次数: 3

摘要

在本文中，我们报告了集成LDMOS晶体管在10gbps通信系统、智能电源系统和x波段功率放大器中的功率放大器的性能。利用10.3125 Gbps伪随机误码序列(PRBS)信号对放大器的开关模式特性进行了评估。采用符合IEEE P802.3aq 10GBASE-LRM以太网标准的测试掩码对记录的眼图进行评估。在测量了600万个数据点后，在被禁止的测试掩码区域没有检测到单个命中。在11 GHz的负载-拉力测量显示，工作增益为16 dB，最大功率附加效率(PAE)为30%，最大漏极效率(EFF)为38%。测量了LDMOS晶体管在67ghz范围内的射频小信号散射参数。提取的截止频率为27 GHz，最大振荡频率为61 GHz。所研究的n-LDMOS晶体管被模块化集成到0.25 μm SiGe:C BiCMOS技术中。

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Evaluation of LDMOS transistors for 10 Gbps switched mode applications and X-band power amplifier

In this article we report on the capability of integrated LDMOS transistors for power amplifiers in 10 gigabit per second (Gbps) communication systems, smart power systems and X-band power amplifiers. The switched mode properties of the amplifier were evaluated using a 10.3125 Gbps pseudo random bit error sequence (PRBS) signal. A test mask according to the IEEE P802.3aq 10GBASE-LRM Ethernet standard was applied to evaluate the recorded eye diagram. No single hit was detected in the forbidden test mask regions after measuring 6 million data points. Load-pull measurements at 11 GHz show an operational gain of 16 dB, a maximum power added efficiency (PAE) of 30 % and a maximum drain efficiency (EFF) of 38 %. RF small signal scattering parameters of the LDMOS transistor were measured up to 67 GHz. A cutoff frequency of 27 GHz and a maximum oscillation frequency of 61 GHz were extracted. The investigated n-LDMOS transistor is modularly integrated into a 0.25 μm SiGe:C BiCMOS Technology.

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2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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