L. Kushner, Kevin Sliech, G. Flewelling, Joseph Cali, C. Grens, S. E. Turner, D. Jansen, J. L. Wood, Gary M. Madison
{"title":"矩阵射频fpga在180nm sigon - soi BiCMOS","authors":"L. Kushner, Kevin Sliech, G. Flewelling, Joseph Cali, C. Grens, S. E. Turner, D. Jansen, J. L. Wood, Gary M. Madison","doi":"10.1109/RFIC.2015.7337760","DOIUrl":null,"url":null,"abstract":"MATRICs (Microwave Array Technology for Reconfigurable Integrated Circuits) is a DC-to-20 GHz general purpose reconfigurable array of RF circuits embedded in a flexible switch fabric. Fabricated in a commercial SiGe-on-SOI BiCMOS process, the MATRICs IC employs SiGe HBTs for high-linearity (> + 10 dBm IIP3) amplification and low phase-noise frequency generation, and SOI FETs for low-loss switching. It achieves high on-chip RF isolation (>80 dB at 16 GHz) due to the high-resistivity SOI substrate, differential signalling, and chip-scale flip-chip bump packaging. MATRICs will allow fixed-function RF systems to have the size, weight, and power benefits of a custom RF ASIC without the associated long development cycle and high NRE, and enable future RF subsystems to be dynamically reconfigured on-the-fly, adapting to changing environments.","PeriodicalId":121490,"journal":{"name":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"216 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"The MATRICs RF-FPGA in 180nm SiGe-on-SOI BiCMOS\",\"authors\":\"L. Kushner, Kevin Sliech, G. Flewelling, Joseph Cali, C. Grens, S. E. Turner, D. Jansen, J. L. Wood, Gary M. Madison\",\"doi\":\"10.1109/RFIC.2015.7337760\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MATRICs (Microwave Array Technology for Reconfigurable Integrated Circuits) is a DC-to-20 GHz general purpose reconfigurable array of RF circuits embedded in a flexible switch fabric. Fabricated in a commercial SiGe-on-SOI BiCMOS process, the MATRICs IC employs SiGe HBTs for high-linearity (> + 10 dBm IIP3) amplification and low phase-noise frequency generation, and SOI FETs for low-loss switching. It achieves high on-chip RF isolation (>80 dB at 16 GHz) due to the high-resistivity SOI substrate, differential signalling, and chip-scale flip-chip bump packaging. MATRICs will allow fixed-function RF systems to have the size, weight, and power benefits of a custom RF ASIC without the associated long development cycle and high NRE, and enable future RF subsystems to be dynamically reconfigured on-the-fly, adapting to changing environments.\",\"PeriodicalId\":121490,\"journal\":{\"name\":\"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"216 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2015.7337760\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2015.7337760","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MATRICs (Microwave Array Technology for Reconfigurable Integrated Circuits) is a DC-to-20 GHz general purpose reconfigurable array of RF circuits embedded in a flexible switch fabric. Fabricated in a commercial SiGe-on-SOI BiCMOS process, the MATRICs IC employs SiGe HBTs for high-linearity (> + 10 dBm IIP3) amplification and low phase-noise frequency generation, and SOI FETs for low-loss switching. It achieves high on-chip RF isolation (>80 dB at 16 GHz) due to the high-resistivity SOI substrate, differential signalling, and chip-scale flip-chip bump packaging. MATRICs will allow fixed-function RF systems to have the size, weight, and power benefits of a custom RF ASIC without the associated long development cycle and high NRE, and enable future RF subsystems to be dynamically reconfigured on-the-fly, adapting to changing environments.