O. Benner, A. Lysov, C. Gutsche, G. Keller, C. Schmidt, W. Prost, F. Tegude
{"title":"基于砷化镓核壳纳米线的结型场效应晶体管","authors":"O. Benner, A. Lysov, C. Gutsche, G. Keller, C. Schmidt, W. Prost, F. Tegude","doi":"10.1109/ICIPRM.2013.6562589","DOIUrl":null,"url":null,"abstract":"Nanowire FETs with all-around Junction-Gate are demonstrated using GaAs core-shell nanowires. The electrical properties of the n-channel Junction FET were determined by DC measurements. The radial pn-junctions show diode-type I-V characteristics. The output and transfer I-V characteristics exhibit good pinch-off, and hysteresis-free transient behavior. First devices with 190 nm nanowire channel diameter show a drain current of ID = 260 nA and a transconductance of gm = 300 nS.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Junction field-effect transistor based on GaAs core-shell nanowires\",\"authors\":\"O. Benner, A. Lysov, C. Gutsche, G. Keller, C. Schmidt, W. Prost, F. Tegude\",\"doi\":\"10.1109/ICIPRM.2013.6562589\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nanowire FETs with all-around Junction-Gate are demonstrated using GaAs core-shell nanowires. The electrical properties of the n-channel Junction FET were determined by DC measurements. The radial pn-junctions show diode-type I-V characteristics. The output and transfer I-V characteristics exhibit good pinch-off, and hysteresis-free transient behavior. First devices with 190 nm nanowire channel diameter show a drain current of ID = 260 nA and a transconductance of gm = 300 nS.\",\"PeriodicalId\":120297,\"journal\":{\"name\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2013.6562589\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562589","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Junction field-effect transistor based on GaAs core-shell nanowires
Nanowire FETs with all-around Junction-Gate are demonstrated using GaAs core-shell nanowires. The electrical properties of the n-channel Junction FET were determined by DC measurements. The radial pn-junctions show diode-type I-V characteristics. The output and transfer I-V characteristics exhibit good pinch-off, and hysteresis-free transient behavior. First devices with 190 nm nanowire channel diameter show a drain current of ID = 260 nA and a transconductance of gm = 300 nS.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
