SOI mosfet的新剂量率模型及其在SPICE中的实现

H. Liu, K. Golke, S.T. Liu
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引用次数: 6

摘要

提出了一种新的基于SPICE的SOI mosfet剂量率模型,该模型考虑了源/体和漏极/体连接处的过量载流子收集。还确定了寄生双极晶体管在感兴趣的剂量率范围内不起显著作用。介绍了一种电路级仿真的实现方法。试验结果验证了该模型的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A new dose rate model for SOI MOSFETs and its implementation in SPICE
A new SPICE based dose rate model is proposed for SOI MOSFETs, which accounts for collections of excess carriers by both source/body and drain/body junctions. It is also identified that the parasitic bipolar transistor does not play a significant role within the range of dose rate of interest. An implementation method for circuit level simulation is described. The validity of this model has been verified by test results.
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