A new study of the junction leakage current due to 45/spl deg/-off active pattern after LOCOS process

Influence of LOCOS process induced stress on junction leakage current is studied. The junction leakage current increases with increasing field oxide and Si/sub 3/N/sub 4/ film thickness. Furthermore the junction leakage current depends on active pattern direction. From evaluation of resolve shear stress for glide direction, the junction leakage current at the active edge inclined 45/spl deg/ to orientation flat is affected by shear stress more than that at active edge perpendicular to the flat. Origin of the junction leakage current is generation center produced by the shear stress.<>