B. Szelag, H. Baudry, D. Muller, A. Giry, D. Lenoble, B. Reynard, D. Pache, A. Monroy
{"title":"在先进的BiCMOS技术中集成和优化高性能射频横向DMOS","authors":"B. Szelag, H. Baudry, D. Muller, A. Giry, D. Lenoble, B. Reynard, D. Pache, A. Monroy","doi":"10.1109/ESSDERC.2003.1256805","DOIUrl":null,"url":null,"abstract":"In this paper, we present the optimisation of a RF lateral DMOS and its integration in an advanced 0.25 /spl mu/m SiGe:C BiCMOS technology. The proposed device shows excellent characteristics; Ron is around 2.5 /spl Omega/.mm with a BVDS larger than 13 V, f/sub T/ and F/sub max/ reach 21 GHz and 40 GHz respectively. These performances fit wireless RF-power amplifier needs. Integration of such a device in a RF oriented BiCMOS process is a key issue for a SOC approach of wireless circuits.","PeriodicalId":350452,"journal":{"name":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Integration and optimisation of a high performance RF lateral DMOS in an advanced BiCMOS technology\",\"authors\":\"B. Szelag, H. Baudry, D. Muller, A. Giry, D. Lenoble, B. Reynard, D. Pache, A. Monroy\",\"doi\":\"10.1109/ESSDERC.2003.1256805\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present the optimisation of a RF lateral DMOS and its integration in an advanced 0.25 /spl mu/m SiGe:C BiCMOS technology. The proposed device shows excellent characteristics; Ron is around 2.5 /spl Omega/.mm with a BVDS larger than 13 V, f/sub T/ and F/sub max/ reach 21 GHz and 40 GHz respectively. These performances fit wireless RF-power amplifier needs. Integration of such a device in a RF oriented BiCMOS process is a key issue for a SOC approach of wireless circuits.\",\"PeriodicalId\":350452,\"journal\":{\"name\":\"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2003.1256805\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2003.1256805","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Integration and optimisation of a high performance RF lateral DMOS in an advanced BiCMOS technology
In this paper, we present the optimisation of a RF lateral DMOS and its integration in an advanced 0.25 /spl mu/m SiGe:C BiCMOS technology. The proposed device shows excellent characteristics; Ron is around 2.5 /spl Omega/.mm with a BVDS larger than 13 V, f/sub T/ and F/sub max/ reach 21 GHz and 40 GHz respectively. These performances fit wireless RF-power amplifier needs. Integration of such a device in a RF oriented BiCMOS process is a key issue for a SOC approach of wireless circuits.
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