300KHz带宽3.9GHz 0.18μm CMOS分数n合成器,宽带相位降噪13dB

Chun-Pang Wu, Shengyang Wang, H. Tsao, Jingshown Wu
{"title":"300KHz带宽3.9GHz 0.18μm CMOS分数n合成器,宽带相位降噪13dB","authors":"Chun-Pang Wu, Shengyang Wang, H. Tsao, Jingshown Wu","doi":"10.1109/ESSCIRC.2011.6045004","DOIUrl":null,"url":null,"abstract":"This paper describes a sigma-delta fractional-N synthesizer architecture with fractional spur and quantization noise cancellation. Modified phase frequency detector (PFD) and charge pump are utilized to improve the linearity. A delay line with 54ps delay resolution is inserted between the reference signal and PFD to compensate phase errors. At least 13dB fractional spur and quantization noise improvement could be achieved with 300 KHz loop bandwidth at 3.9GHz synthesized frequency in a standard 0.18μm CMOS technology which occupies 1.21×1.23mm2. The improvement can be further enhanced when delay resolution is improved with more advanced process.","PeriodicalId":239979,"journal":{"name":"2011 Proceedings of the ESSCIRC (ESSCIRC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 300KHz bandwidth 3.9GHz 0.18μm CMOS fractional-N synthesizer with 13dB broadband phase noise reduction\",\"authors\":\"Chun-Pang Wu, Shengyang Wang, H. Tsao, Jingshown Wu\",\"doi\":\"10.1109/ESSCIRC.2011.6045004\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a sigma-delta fractional-N synthesizer architecture with fractional spur and quantization noise cancellation. Modified phase frequency detector (PFD) and charge pump are utilized to improve the linearity. A delay line with 54ps delay resolution is inserted between the reference signal and PFD to compensate phase errors. At least 13dB fractional spur and quantization noise improvement could be achieved with 300 KHz loop bandwidth at 3.9GHz synthesized frequency in a standard 0.18μm CMOS technology which occupies 1.21×1.23mm2. The improvement can be further enhanced when delay resolution is improved with more advanced process.\",\"PeriodicalId\":239979,\"journal\":{\"name\":\"2011 Proceedings of the ESSCIRC (ESSCIRC)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 Proceedings of the ESSCIRC (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2011.6045004\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Proceedings of the ESSCIRC (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2011.6045004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文描述了一种具有分数阶杂散和量化消噪的σ - δ分数阶n合成器结构。采用改进相频检测器(PFD)和电荷泵来提高线性度。在参考信号和PFD之间插入一条延迟分辨率为54ps的延迟线来补偿相位误差。在占据1.21×1.23mm2的标准0.18μm CMOS工艺中,在3.9GHz合成频率下,以300 KHz环路带宽实现至少13dB的分数杂散和量化噪声改善。当采用更先进的工艺提高延迟分辨率时,这种改进可以进一步增强。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 300KHz bandwidth 3.9GHz 0.18μm CMOS fractional-N synthesizer with 13dB broadband phase noise reduction
This paper describes a sigma-delta fractional-N synthesizer architecture with fractional spur and quantization noise cancellation. Modified phase frequency detector (PFD) and charge pump are utilized to improve the linearity. A delay line with 54ps delay resolution is inserted between the reference signal and PFD to compensate phase errors. At least 13dB fractional spur and quantization noise improvement could be achieved with 300 KHz loop bandwidth at 3.9GHz synthesized frequency in a standard 0.18μm CMOS technology which occupies 1.21×1.23mm2. The improvement can be further enhanced when delay resolution is improved with more advanced process.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信