使用功能故障建模快速开关级故障仿真

E. Vandris, G. Sobelman
{"title":"使用功能故障建模快速开关级故障仿真","authors":"E. Vandris, G. Sobelman","doi":"10.1109/ICCAD.1990.129844","DOIUrl":null,"url":null,"abstract":"A novel switch-level fault simulation method is presented for MOS circuits that combines compiled switch-level simulation techniques with functional fault modeling. The simulator models both node stuck-at-zero, stuck-at-one faults and transistor stuck-on, stuck-open faults. During compilation the switch-level circuit components are compiled into functional models. The effect of transistor faults on the function of the circuit components is modeled by functional fault models that execute very fast during simulation. The differential fault simulation algorithm developed for gate-level circuits is adapted for use at the switch-level and is shown to perform well, although it incurs a higher overhead due to the dynamic memory properties of MOS circuits.<<ETX>>","PeriodicalId":242666,"journal":{"name":"1990 IEEE International Conference on Computer-Aided Design. Digest of Technical Papers","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Fast switch-level fault simulation using functional fault modeling\",\"authors\":\"E. Vandris, G. Sobelman\",\"doi\":\"10.1109/ICCAD.1990.129844\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel switch-level fault simulation method is presented for MOS circuits that combines compiled switch-level simulation techniques with functional fault modeling. The simulator models both node stuck-at-zero, stuck-at-one faults and transistor stuck-on, stuck-open faults. During compilation the switch-level circuit components are compiled into functional models. The effect of transistor faults on the function of the circuit components is modeled by functional fault models that execute very fast during simulation. The differential fault simulation algorithm developed for gate-level circuits is adapted for use at the switch-level and is shown to perform well, although it incurs a higher overhead due to the dynamic memory properties of MOS circuits.<<ETX>>\",\"PeriodicalId\":242666,\"journal\":{\"name\":\"1990 IEEE International Conference on Computer-Aided Design. Digest of Technical Papers\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1990 IEEE International Conference on Computer-Aided Design. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCAD.1990.129844\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE International Conference on Computer-Aided Design. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCAD.1990.129844","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

提出了一种将编译式开关级仿真技术与功能故障建模相结合的MOS电路开关级故障仿真方法。该模拟器模拟了节点卡在零、卡在一故障和晶体管卡在上、卡在开故障。在编译过程中,开关级电路元件被编译成功能模型。晶体管故障对电路元件功能的影响采用功能故障模型来模拟,在仿真过程中执行速度非常快。为门级电路开发的差分故障模拟算法适用于开关级,尽管由于MOS电路的动态记忆特性,它会产生更高的开销,但结果表明它表现良好
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fast switch-level fault simulation using functional fault modeling
A novel switch-level fault simulation method is presented for MOS circuits that combines compiled switch-level simulation techniques with functional fault modeling. The simulator models both node stuck-at-zero, stuck-at-one faults and transistor stuck-on, stuck-open faults. During compilation the switch-level circuit components are compiled into functional models. The effect of transistor faults on the function of the circuit components is modeled by functional fault models that execute very fast during simulation. The differential fault simulation algorithm developed for gate-level circuits is adapted for use at the switch-level and is shown to perform well, although it incurs a higher overhead due to the dynamic memory properties of MOS circuits.<>
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