高密度，低导通电阻，高边n沟道横向功率MOSFET与厚铜金属

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.239899

M. Sawada, A. Sugi, M. Iwaya, K. Takagiwa, S. Matsunaga, S. Kajiwara, K. Mochizuki, N. Fujishima

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引用次数: 5

摘要

我们提出了一种低侧n沟道沟槽横向功率MOSFET (TLPM) (N.Fujishima et al .， procofiedm 2002, p.455-458)。本文首次提出了一种与衬底隔离的高侧n沟道TLPM，并对其进行了表征。制备的高侧TLPM器件的导通电阻为17 m/spl ω /-mm/sup 2/，击穿电压为21 V。

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High density, low on-resistance, high side N-channel trench lateral power MOSFET with thick copper metal

We proposed a low side N-channel trench lateral power MOSFET (TLPM) in (N.Fujishima et al, Proc. of IEDM 2002, p.455-458). In this paper, a high side N-channel TLPM, which is isolated from the substrate, is proposed, fabricated and characterized for the first time. The fabricated high side TLPM devices exhibit a specific on-resistance of 17 m/spl Omega/-mm/sup 2/ with a breakdown voltage of 21 V.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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