MOVPE法制备iii族锑化物及其应用

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492280

P. Klipstein, M. Lakrimi, S. Lyapin, N. Mason, R. Nicholas, P. Walker

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引用次数: 0

摘要

在InP/InGaAs和InAs/GaSb超晶格的生长中，有许多重要的共同考虑因素。这包括:超晶格内周期的均匀性，界面的类型及其在超晶格内的排列，以及这些界面的突然性。InAs/GaSb超晶格是锑基半导体的一个小分支，是研究固体物理和设计红外应用器件的兴趣所在。本文将重点介绍一些InAs/GaSb超晶格的MOVPE生长，并将其与已发表的InGaAs/InP超晶格的生长结果进行比较，特别是关于上面提到的问题。

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Growth and application of group III-antimonides by MOVPE

There are a number of important considerations in common in the growth of InP/InGaAs and InAs/GaSb superlattices. These include: the uniformity of the periodicity within the superlattice, the type of interfaces and their arrangement within the superlattice and the abruptness of those interfaces. InAs/GaSb superlattices are a small sub-set of antimonide based semiconductors which are of interest to those studying solid state physics and designing devices with infrared applications. This paper will highlight the growth, by MOVPE, of some InAs/GaSb superlattices, and compare this with published results from the growth of InGaAs/InP superlattices, particularly with respect to the issues mentioned above.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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