W. Sheng, B. Xia, A. Emira, Chunyu Xin, S. T. Moon, A. Valero-López, E. Sánchez-Sinencio
{"title":"单片CMOS低中频蓝牙接收器","authors":"W. Sheng, B. Xia, A. Emira, Chunyu Xin, S. T. Moon, A. Valero-López, E. Sánchez-Sinencio","doi":"10.1109/CICC.2002.1012806","DOIUrl":null,"url":null,"abstract":"A fully integrated low-IF CMOS Bluetooth receiver is presented. The IC is fabricated in TSMC 0.35 /spl mu/m standard CMOS process. The receiver consists of a radio frequency (RF) front end, a phase lock loop (PLL), an active complex filter, a GFSK demodulator and a frequency offset cancellation circuit. The experimental results show a -82 dBm sensitivity at le-3 BER, -10 dBm IIP3 and 15 dB noise figure.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A monolithic CMOS low-IF Bluetooth receiver\",\"authors\":\"W. Sheng, B. Xia, A. Emira, Chunyu Xin, S. T. Moon, A. Valero-López, E. Sánchez-Sinencio\",\"doi\":\"10.1109/CICC.2002.1012806\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully integrated low-IF CMOS Bluetooth receiver is presented. The IC is fabricated in TSMC 0.35 /spl mu/m standard CMOS process. The receiver consists of a radio frequency (RF) front end, a phase lock loop (PLL), an active complex filter, a GFSK demodulator and a frequency offset cancellation circuit. The experimental results show a -82 dBm sensitivity at le-3 BER, -10 dBm IIP3 and 15 dB noise figure.\",\"PeriodicalId\":209025,\"journal\":{\"name\":\"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2002.1012806\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2002.1012806","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A fully integrated low-IF CMOS Bluetooth receiver is presented. The IC is fabricated in TSMC 0.35 /spl mu/m standard CMOS process. The receiver consists of a radio frequency (RF) front end, a phase lock loop (PLL), an active complex filter, a GFSK demodulator and a frequency offset cancellation circuit. The experimental results show a -82 dBm sensitivity at le-3 BER, -10 dBm IIP3 and 15 dB noise figure.