基于氢化微晶硅(µc-Si:H)的太阳能电池器件性能有限元模拟

L. Asmin
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引用次数: 0

摘要

太阳能电池器件层的结构和厚度对太阳能电池的工作性能有很大的影响。因此,本研究的目的是研究氢化微晶硅太阳能电池的厚度和器件结构如何影响它们的工作效果。对结构进行一维(1D)模拟或建模进行分析。利用MATLAB编程对仿真结果进行分析。由于结构的影响,光学带隙会发生变化,因此p层、I层和n层的厚度保持不变,分别为250 Å、9000 Å和250 Å。结果表明,在光学带隙处,Eci = 1.39 eV时获得最大性能,输出功率为0.063465 w。而在厚度对i层影响的模拟中,光学带隙设为恒定值Eci = 1,4 eV,而p层和n层的厚度设为250 Å。结果还表明,在i层厚度为9000 Å时性能最佳,产生的功率为0.063364 w。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Simulation of Solar Cell Device Performance Based on Hydrogenated Microcrystal Silicon (µc-Si:H) With Finite Element Method (FEM)
The structure and thickness of the solar cell device layer have a big impact on how well the solar cell works. There for, the aim of this study was to examine how hydrogenated microcrystalline silicon solar cells’ thickness and device structure affected how well they work. Simulation or modeling of the structure in one dimension (1D) is used for the analysis.  MATLAB programming was used to analyze the simulation result. The optical band gap changes due to the influence of the structure, therefore the thickness of the p-, I, and n layers are kept constant at 250 Å, 9000 Å, and 250 Å respectively. The results showed that the maximum performance is obtained at the optical band gap, Eci = 1,39 eV, and the resulting power is 0.063465 Watt. Whereas in the simulation of the effect of the thickness on the i-layer, the optical band gap is set to a constant value of Eci = 1,4 eV, while the thickness of the p-layer and n-layer is set to 250 Å. The results also indicate that the maximum performance is at the i-layer thickness of 9000 Å and the power generated is 0.063364 Watt.
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