具有拆分有源半导体和源极/漏极的高鲁棒性氧化薄膜晶体管

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-01 DOI:10.1109/IEDM.2017.8268350

Suhui Lee, Di Geng, Ling Li, Ming Liu, Jin Jang

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引用次数: 5

摘要

我们报告了在塑料衬底上使用分裂活性氧化物半导体和源极/漏极的极其稳定和高性能的a-IGZO TFT腐蚀阻蚀剂(E/S)。a-IGZO TFTs具有超过70cm2/Vs的高迁移率，并且在正偏置应力和机械应力下非常稳定。因此，该技术可用于制造高分辨率柔性AMOLED显示器。

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Highly robust oxide thin film transistors with split active semiconductor and source/drain electrodes

We report extremely stable and high performance etch-stopper (E/S) a-IGZO TFT on plastic substrate by using split active oxide semiconductor and source/drain electrodes. The a-IGZO TFTs exhibit high mobility over 70cm2/Vs and extremely stable under positive bias stress and mechanical stress. Therefore, this technology can be used for the manufacturing of high resolution flexible AMOLED displays.

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2017 IEEE International Electron Devices Meeting (IEDM)

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